The effect of implantation on explosively crystallized a-Si
- 1 January 1983
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (1), 392-394
- https://doi.org/10.1063/1.331715
Abstract
Implantation in deposited a‐Si lowers the threshold temperature of the explosive phenomena. We observe interaction between solid‐ and liquid‐phase explosive crystallization. In the solid‐phase explosive crystallization mode, an implanted layer crystallizes independently of the underlying a‐Si.Keywords
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