Origin and Incorporation Mechanism for Oxygen Contaminants in a-Si:H and μc-Si:H Films Prepared by the Very High Frequency (70 MHz) Glow Discharge Technique
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
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This publication has 5 references indexed in Scilit:
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- Influence of higher deposition temperature on a-Si:H material properties, powder formation and light-induced degradation, using the VHF (70 MHz) glow discharge techniqueJournal of Non-Crystalline Solids, 1993
- Frequency effects in silane plasmas for plasma enhanced chemical vapor depositionJournal of Vacuum Science & Technology A, 1992
- Doping effect of oxygen or nitrogen impurity in hydrogenated amorphous silicon filmsApplied Physics Letters, 1991
- Effect of Reduction in Impurity Content for a-Si:H FilmsJapanese Journal of Applied Physics, 1990