High-temperature CW operation of visible light-emitting GaInP/AlGaInP inner stripe laser diodes

Abstract

High-temperature CW operation up to 90°C was achieved in GaInP/AlGaInP visible-light-emitting inner stripe laser diodes with optimised thicknesses and doping levels of the p-cladding layer. The CW threshold current was 65 mA at room temperature. The characteristic temperature was 120 K below 55°C and 85 K above 55°C. The lasing wavelength was 670 nm. The laser diodes have been operated for more than 1000 h at 60°C, 3 mW.