Modification of the Threshold Current of GaAs Laser by a Reflective Coating on One End

Abstract

We have observed the variation of threshold currents of GaAs laser diodes with the change of reflectivity on one end as well as their variation with temperatures at 77 and 4°K. The result seems to be interpreted in the light of a simple model that the gain in the active region is proportional to the current density. Calculated values for the loss and gain factors at 77°K, ranged from 12 to 55 cm^-1 and 0.25 to 0.6×10^-2 cm/A, respectively. These values were found to change appreciably with temperatures.