Diffraction contrast behavior of grown-in dislocations in V3Si single crystals

Abstract

The diffraction contrast behavior of grown‐in dislocations in V₃Si single crystals has been examined in detail by transmission electron microscopy. It is inferred that the Burgers vectors of these line imperfections are 〈100〉. The observed image features are rather complex and are compared with computer‐simulated dislocation images. It is suggested that the likely glide systems in V₃Si are 〈100〉 {001}. Since these slip systems yield only three independent systems, the observed lack of ductility in polycrystalline aggregates may be rationalized.