Formation of NiSi and current transport across the NiSi-Si interface
- 31 October 1971
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (10), 901-908
- https://doi.org/10.1016/0038-1101(71)90157-2
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Reverse current-voltage characteristics of metal-silicide Schottky diodesSolid-State Electronics, 1970
- The structure of Ni2SiActa Crystallographica, 1952
- The structure of NiSiActa Crystallographica, 1951