Diffusion Mechanism in Ag/TCNQ Thin Films with Cu as Tracers
- 1 April 2005
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 44 (4L), L494-496
- https://doi.org/10.1143/jjap.44.l494
Abstract
Metalorganic thin film Ag-7,7,8,8-tetracyanoquinodimethane (TCNQ) is prepared by successive vacuum evaporation of Ag and TCNQ. The diffusion behavior in Ag-TCNQ is studied using Cu as a tracer, in combination with profile analyses by secondary ion mass spectroscopy (SIMS). The results show that the diffusion mechanism in Ag-TCNQ thin film is Ag ion diffusion accompanied by ion exchange.Keywords
This publication has 13 references indexed in Scilit:
- Spectroscopic investigation of pressure-induced phase transitions in TCNQ complex saltsSolid State Communications, 2003
- Current-Induced Insulator-Metal Transition and Pattern Formation in an Organic Charge-Transfer ComplexScience, 1999
- Thermistor effect and current induced transition in copper-tetracyanoquinodimethane compositesSolid State Ionics, 1996
- Characterization of Cu-CuTCNQ-M devices using scanning electron microscopy and scanning tunneling microscopyChemistry of Materials, 1993
- Preparation of polymeric metal-tetracyanoquinodimethane film and its bistable switchingApplied Physics Letters, 1992
- A new material for optical, electrical and electronic thin film memoriesVacuum, 1992
- Imaging of silver and copper tetracyanoquinodimethane salts using a scanning tunneling microscope and an atomic force microscopeJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Polarized memory effect in the device including the organic charge-transfer complex, copper-tetracyanoquinodimethaneJournal of Applied Physics, 1990
- Reversible Write-Erase Properties of CuTCNQ Optical Recording MediaJapanese Journal of Applied Physics, 1986
- Electrical switching and memory phenomena in Cu-TCNQ thin filmsApplied Physics Letters, 1979