Spectroscopic determination of the position of the ferm-level in doped amorphous hydrogenated silicon
- 28 February 1979
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 29 (5), 415-417
- https://doi.org/10.1016/0038-1098(79)91207-9
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Photoemission Studies of 2p Core Levels of Pure and Heavily Doped SiliconPhysica Status Solidi (b), 1978
- Photoelectron Spectra of Hydrogenated Amorphous SiliconPhysical Review Letters, 1977
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976