Transistor design for low distortion at high frequencies

Abstract

The design of high-frequency bipolar transistors with very low distortion is described. Simple expressions for distortion are used to select device parameters for the optimization of distortion performance. The effect of epitaxial-layer characteristics on device performance is considered in detail, and the importance of collector depletion in achieving low distortion is shown. The influence of device geometry on distortion is considered, and the degradation caused by MOS capacitance is illustrated.