Improvement in the detection of oxygen in silicon by infra-red absorption
- 30 November 1969
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (11), 923-925
- https://doi.org/10.1016/0038-1101(69)90051-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Etats vibrationnels associes au groupement Si2O dans le siliciumInfrared Physics, 1967
- Oxygen in germanium by vacuum fusion and infra-red absorptionBritish Journal of Applied Physics, 1965
- Excitation Spectra of Lithium Donors in Silicon and GermaniumPhysical Review B, 1965
- Radioactivation Analysis of Oxygen in Silicon by Irradiation with α-Particles in a CyclotronNature, 1961
- Diffusion Rate of Li in Si at Low TemperaturesPhysical Review B, 1960
- Infrared Absorption of Oxygen in SiliconPhysical Review B, 1957
- Oxygen Content of Silicon Single CrystalsJournal of Applied Physics, 1957