NbN/Nb Josephson Junction with a Plasma Oxidized Barrier
- 1 May 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (5A), L327-329
- https://doi.org/10.1143/jjap.23.l327
Abstract
Oxide growth on a niobium nitride film formed by rf plasma oxidation was studied using NbN/Nb-oxide/Nb tunnel junctions. A model of the oxide growth on niobium nitride is discussed to compare the oxidation on a film with a pre-oxidized layer formed by thermal oxidation and a film without the pre-oxidized layer. Using a thermally pre-oxidized layer, a junction with high critical current density can form with good controllability.Keywords
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