Photoexcitation properties of infrared active defects induced by neutron irradiation in silicon
- 31 August 1982
- journal article
- Published by Elsevier in Journal of Nuclear Materials
- Vol. 108-109, 693-699
- https://doi.org/10.1016/0022-3115(82)90542-6
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- Spin-1 Centers in Neutron-Irradiated SiliconPhysical Review B, 1963