Chemically Deposited NiCo Layers as High-speed Storage Elements†

Abstract

Layers of NiCo have boon prepared by chemical reduction and their possible application for high-speed memory elements has boon examined. Switching constants of 0·15 μsee oersted have been achieved on layers with domain wall coereivities of about 2 oersteds and the process appears to give reproducible results. The method is simple and inexpensive and should be adaptable to the production of storage elements in largo numbers.