Facile fabrication method for p∕n-type and ambipolar transport polyphenylenevinylene-based thin-film field-effect transistors by blending C60 fullerene

Abstract

We have demonstrated the solution-processed $p$ - and $n$ -type transports including ambipolar transport organic thin-film transistors (OTFTs), required for complementary thin-film integrated circuit technology, by a facile method of blending the $n$ -type ${\mathrm{C}}_{60}$ and the $p$ -type [poly(2-methoxy-5-[2’-ethyl-hexyloxy]-1,4-phenylene vinylene] (MEH-PPV). The carrier transport of PPV-based thin-film field-effect transistors with various ${\mathrm{C}}_{60}$ compositions are investigated by using the field-effect gated structure. One of the important findings is that tunable electronic properties of OTFTs are achieved by controlling ${\mathrm{C}}_{60}$ composition using a simple and an inexpensive spin-cast technology. The mobility increases with increase in the ${\mathrm{C}}_{60}$ composition in both $n$ - and $p$ -type OTFTs. Temperature measurements on $n$ -type OTFTs revealed that transport follows a thermally activated hopping transport model with small activation energy.