Quantum efficiency and overlap integrals in InSb
- 1 September 1967
- journal article
- Published by Springer Nature in Czechoslovak Journal of Physics
- Vol. 17 (9), 735-756
- https://doi.org/10.1007/bf01706015
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Impact Ionization Threshold in SemiconductorsProceedings of the Physical Society, 1963
- Quantum efficiency in InSbJournal of Physics and Chemistry of Solids, 1962
- Secondary multiplication in siliconSolid-State Electronics, 1961
- Problems related top-n junctions in siliconCzechoslovak Journal of Physics, 1961
- Effect of the Lattice on Dielectric Properties of an Electron GasPhysical Review B, 1960
- Self-Consistent Field Approach to the Many-Electron ProblemPhysical Review B, 1959
- The quantum efficiency of the internal photo-electric effect in indium antimonideCzechoslovak Journal of Physics, 1959
- On the theory of the spectral dependence of the quantum efficiency of homopolar crystalsCzechoslovak Journal of Physics, 1957
- Electron scattering in InSbJournal of Physics and Chemistry of Solids, 1957
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957