The role of impurities in the formation of quenched-in recombination centres in thermally treated silicon
- 16 February 1976
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 33 (2), K87-K90
- https://doi.org/10.1002/pssa.2210330245
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Solubility and origin of thermally induced recombination centres in n-type and p-type siliconPhysica Status Solidi (a), 1975
- Decay of excess carrier concentration in thermally treated siliconPhysica Status Solidi (a), 1973
- Recombination at iron atoms and at thermally generated lattice defects in n-siliconPhysica Status Solidi (a), 1972
- Defects in Quenched SiliconPhysica Status Solidi (b), 1969
- Diffusion Mechanisms and Point Defects in Silicon and GermaniumPhysica Status Solidi (b), 1968
- Quenched‐in Levels in p‐Type SiliconPhysica Status Solidi (b), 1967
- Investigation of quenched-in defects in Ge and Si by means of 64CuJournal of Physics and Chemistry of Solids, 1965