94 GHz transistor amplification using an HEMT
- 1 January 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (15), 780-781
- https://doi.org/10.1049/el:19860535
Abstract
Transistor amplification at 94 GHz has been demonstrated for the first time. A single-stage amplifier employing a high-electron-mobility transistor (HEMT) exhibits a small-signal gain of 3.6 dB and an output power of 3.4 mW with 2 dB gain.Keywords
This publication has 1 reference indexed in Scilit:
- A 60 GHz GaAs FET AmplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005