Stress and Microstructure in Phosphorus Doped Polycrystalline Silicon
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Cross-sectional transmission electron microscopy of x-ray multilayer thin film structuresJournal of Electron Microscopy Technique, 1991
- Stress and Microstructure in Lpcvd Polycrystalline Silicon Films: Experimental Results and Closed Form Modeling of StressesMRS Proceedings, 1991
- Design properties of polycrystalline siliconSensors and Actuators A: Physical, 1990
- Lpcvd Polycrystalline Silicon Thin Films: The Evolution of Structure, Texture and StressMRS Proceedings, 1990
- Applications of Polysilicon Films in Microsensors and MicroactuatorsMRS Proceedings, 1987
- Stress Effects in Boron‐Implanted Polysilicon FilmsJournal of the Electrochemical Society, 1984
- Grain Growth Mechanism of Heavily Phosphorus‐Implanted Polycrystalline SiliconJournal of the Electrochemical Society, 1978
- Physical MetallurgyJournal of the Electrochemical Society, 1977
- Calculated elastic constants for stress problems associated with semiconductor devicesJournal of Applied Physics, 1973
- The tension of metallic films deposited by electrolysisProceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character, 1909