Microwave performance of GaN MESFETs
- 21 July 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (15), 1248-1249
- https://doi.org/10.1049/el:19940833
Abstract
GaN MESFETs have been fabricated with a 0.25 µm thick channel on a high resistivity GaN layer grown by metal organic vapour phase epitaxy. These devices have a transconductance of 20 mS/mm. For a 0.7 µm gate length device, the measured fT and fmax were 8 and 17 GHz, respectively.Keywords
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