In situ observation of anodic dissolution process of n-GaAs in HCl solution by electrochemical atomic force microscope

Abstract

Anodic dissolution of a GaAs(100) face was investigated by in situ electrochemical atomic force microscope (AFM). While no surface structure change was observed at –0.6 V (vs Ag/AgCl) where no current flowed, dome structure on surface was removed, and flat surface was obtained after keeping the potential at 0 V (vs Ag/AgCl) where anodic current of ~150 µA cm–2 flowed. An atomically resolved AFM image was obtained in the flat region and shows the surface is dominated by a (111) face after the anodic dissolution