Vertical-cavity surface-emitting laser diodes fabricated by phase-locked epitaxy
- 21 October 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (17), 2079-2081
- https://doi.org/10.1063/1.106414
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Multiple wavelength tunable surface-emitting laser arraysIEEE Journal of Quantum Electronics, 1991
- InGaAs-GaAs quantum well vertical-cavity surface-emitting laser using molecular beam epitaxial regrowthApplied Physics Letters, 1991
- High-power cw vertical-cavity top surface-emitting GaAs quantum well lasersApplied Physics Letters, 1990
- Submilliamp threshold vertical-cavity laser diodesApplied Physics Letters, 1990
- Transverse mode characteristics of vertical cavity surface-emitting lasersApplied Physics Letters, 1990
- Precision AlGaAs Bragg reflectors fabricated by phase-locked epitaxyApplied Physics Letters, 1990
- Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface-emitting lasersApplied Physics Letters, 1990
- Vertical-cavity surface-emitting InGaAs/GaAs lasers with planar lateral definitionApplied Physics Letters, 1990
- Low threshold planarized vertical-cavity surface-emitting lasersIEEE Photonics Technology Letters, 1990
- Well defined superlattice structures made by phase-locked epitary using RHEED intensity oscillationsSuperlattices and Microstructures, 1985