Electron Capture by a Lattice Vacancy in Si

Abstract

The electron-capture cross section of the deep trap due to a lattice vacancy in Si is calculated by taking into account the distortion of the lattice vibrations by the lattice vacancy. It is assumed that the trap is a neutral center for electron capture. The results show that although the distortion effect enlarges the calculated cross section by three orders of magnitude at 300°K, it is not enough to explain the magnitudes of observed cross sections.