Strain-enhanced luminescence degradation in GaAs/GaAlAs double-heterostructure lasers revealed by photoluminescence
- 1 December 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (12), 7914-7916
- https://doi.org/10.1063/1.325965
Abstract
Photoluminescence degradation observed in room‐temperature‐lifetested GaAs/GaAlAs DH stripe lasers has been correlated with the strain field induced in the devices by the stripe‐defining oxide. A degradation mechanism based on strain‐ and nonradiative‐recombination‐enhanced point‐defect migration is proposed.Keywords
This publication has 5 references indexed in Scilit:
- Photoelastic waveguides and their effect on stripe-geometry GaAs/Ga1−xAlxAs lasersJournal of Applied Physics, 1979
- The effects of processing stresses on residual degradation in long-lived Ga1−xAlxAs lasersApplied Physics Letters, 1979
- The temperature dependence of degradation mechanisms in long-lived (GaAl)As DH lasersJournal of Applied Physics, 1978
- Nonradiative ’’large dark spots’’ in AlxGa1−xAs-GaAs heterostructuresJournal of Applied Physics, 1977
- Observation of Recombination-Enhanced Defect Reactions in SemiconductorsPhysical Review Letters, 1974