A study of millimeter-wave GaAs IMPATT oscillator and amplifier noise

1 June 1973

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 20 (6), 517-521
https://doi.org/10.1109/T-ED.1973.17691

Abstract

Noise characterization of a set of epitaxially grown p-n-junction GaAs IMPATTS that operate efficiently from 26-35 GHz is reported. In oscillator operation, the diodes exhibit an excess noise near the carrier, which follows a 1/fdependence. Far from the carrier an AM DSB SNR of 134 dB in a 100-Hz window and an FM noise measure of 36 dB are observed. As a reflection amplifier, a gain of 22 dB with a 250-MHz bandwidth and a noise figure of 25.5 dB is achieved. Under higher gain conditions (28-dB gain) a 24-dB figure is obtained.

Keywords

NOISE
AMPLIFIER
DIODES
FIGURE
CARRIER
GAAS IMPATTS
1/FDEPENDENCE

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