Intrinsic defects in ZnO varistors

Abstract

Theoretical calculations are presented for equilibrium concentrations of zinc and oxygen vacancies in ZnO. Results are presented at the sintering temperature, and also at room temperature. Theoretical calculations of reaction constants show that the intrinsic donor is the oxygen vacancy, rather than the zinc interstitial. The depletion of vacancies in the surface region, as the ZnO is cooled from the sintering temperature, is also calculated. Homojunction effects which are caused by such depletion are shown to be small.