Liquid phase epitaxy of high-purity GaAs on conducting n-type substrates
- 1 July 1981
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (7), 4640-4645
- https://doi.org/10.1063/1.329344
Abstract
The liquid phase epitaxial technique for the deposition of lightly doped n‐type GaAs on conducting n‐type substrates is described. The effect of the starting materials, in particular the substrates and the undoped source crystal, on the epitaxial layer properties has been observed for a fixed set of growth conditions. Schottky barriers fabricated on this material exhibit near ideal current‐voltage characteristics with breakdown voltages approaching the theoretical limit.Keywords
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