X-ray-photoelectron-diffraction investigation of strain at the Si/Ge(001) interface
- 7 August 1989
- journal article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 63 (6), 640-643
- https://doi.org/10.1103/physrevlett.63.640
Abstract
We describe a structural determination of pseudomorphic Si on Ge(001) by means of x-ray-photoelectron diffraction. By comparing the measured angular coordinates of the forward-scattering-induced [011] peak with those calculated by means of single-scattering theory, we find that the lattice constant perpendicular to the interface is 5.34±0.04 Å. This value exceeds that predicted by elastic theory by 0.08 Å.Keywords
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