Operating characteristics of GaAs/AlGaAs FET-SEED smart pixels

1 January 1992

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.1992.307446

Abstract

We have realized monolithic optically addressed integrated circuits. The optical element is a p-i-n multiple quantum well (MQW) device designed for normal incidence operation as both a detector and an optical modulator for 850 nm light. Electronic circuits are realized in GaAs/AlGaAs doped-channel heterojunction field effect transistors (HFETs) with buffered FET logic. Experimental data for various types of circuits are shown that demonstrate 2 Gb/s operation under electrical drive, <50 fJ input optical switching energy at 200 Mb/s, and circuit densities of up to 44 FETs.

Keywords

This publication has 3 references indexed in Scilit:

Operation of a fully integrated GaAs-Al/sub x/Ga/sub 1-x/As FET-SEED: a basic optically addressed integrated circuit
IEEE Photonics Technology Letters, 1992
Diode-clamped symmetric self-electro-optic effect devices with subpicojoule switching energies
Applied Physics Letters, 1992
Optimization of absorption in symmetric self-electrooptic effect devices: a systems perspective
IEEE Journal of Quantum Electronics, 1991

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