Growth Faults in β Silicon Carbide Whiskers
- 15 March 1966
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (4), 1849-1851
- https://doi.org/10.1063/1.1708613
Abstract
Silicon carbide whiskers grown from the vapor were examined by transmission electron microscopy and electron diffraction. Nearly 95% of the whiskers examined were of the β (cubic) crystalline form and contained stacking faults on {111}. The stacking faults form microtwins of the order of a few lattice parameters thick.Keywords
This publication has 3 references indexed in Scilit:
- Zum Wachstum und zur Fehlordnung des SiliziumcarbidsZeitschrift für Kristallographie, 1965
- Electron Microscopy and Diffraction of Thin Films: Interpretation and Correlation of Images and Diffraction PatternsPhysica Status Solidi (b), 1964
- Orientation of Stacking Faults and Dislocation Etch Pits in β-SiCJournal of the Electrochemical Society, 1964