Size effects in polarization switching in ferroelectric thin films
- 1 April 1997
- journal article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 16 (1-4), 237-244
- https://doi.org/10.1080/10584589708013046
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Shift and deformation of the hysteresis curve of ferroelectrics by defects: An electrostatic modelJournal of Applied Physics, 1995
- Ferroelectric properties and fatigue of PbZr0.51Ti0.49O3 thin films of varying thickness: Blocking layer modelJournal of Applied Physics, 1994
- Apparent thickness effect on properties of ferroelectric PZT thin layersFerroelectrics, 1994
- Dependence of electrical properties on film thickness in Pb(ZrxTi1−x)O3 thin films produced by metalorganic chemical vapor depositionJournal of Applied Physics, 1993
- Size effects in thermofluctuational ferroelectric switchingFerroelectrics, 1992
- Device modeling of ferroelectric capacitorsJournal of Applied Physics, 1990
- Thickness dependence of the nucleation field of triglycine sulphatePhilosophical Magazine, 1962
- Mechanism for the Sidewise Motion of 180° Domain Walls in Barium TitanatePhysical Review B, 1960
- On the theory of the coercive field of single-domain crystals of BaTiO3Czechoslovak Journal of Physics, 1958
- Switching Time in Ferroelectric BaTiO3 and Its Dependence on Crystal ThicknessJournal of Applied Physics, 1956