p−InP/n−CdS solar cells and photovoltaic detectors
- 1 March 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (5), 229-230
- https://doi.org/10.1063/1.88131
Abstract
We have prepared p−InP/n−CdS heterodiode photovoltaic detectors with a uniform quantum efficiency of ∼70% for wavelengths between 550 and 910 nm. On a cloudy day in New Jersey, (53 mW/cm2) solar power conversion efficiencies of 12.5% have been measured on cells provided with antireflection coatings.Keywords
This publication has 9 references indexed in Scilit:
- Ohmic contacts for moderately resistive p−type InPJournal of Applied Physics, 1975
- CuInSe2/CdS heterojunction photovoltaic detectorsApplied Physics Letters, 1974
- Efficient electroluminescence from InP diodes grown by LPE from Sn solutionsApplied Physics Letters, 1974
- Ga[sub 1−x]Al[sub x]As-GaAs P-P-N Heterojunction Solar CellsJournal of the Electrochemical Society, 1973
- High-efficiency Ga1−xAlxAs–GaAs solar cellsApplied Physics Letters, 1972
- Cadmium/Sulfur Isothermal Source for CdS DepositionReview of Scientific Instruments, 1970
- Electroreflectance at a Semiconductor-Electrolyte InterfacePhysical Review B, 1967
- Präzisionsbestimmung der Gitterkonstanten vonAIIIBv-VerbindungenActa Crystallographica, 1958
- Theoretical Considerations Governing the Choice of the Optimum Semiconductor for Photovoltaic Solar Energy ConversionJournal of Applied Physics, 1956