Rankings
Publications
Search Publications
Cited-By Search
Sources
Publishers
Scholars
Scholars
Top Cited Scholars
Organizations
About
Login
Register
Home
Publications
Physical mechanisms responsible for short channel effects in MOS devices
Home
Publications
Physical mechanisms responsible for short channel effects in MOS devices
Physical mechanisms responsible for short channel effects in MOS devices
TN
T.N. Nguyen
T.N. Nguyen
JP
J.D. Plummer
J.D. Plummer
Publisher Website
Google Scholar
Add to Library
Cite
Download
Share
Download
1 January 1981
proceedings article
Published by
Institute of Electrical and Electronics Engineers (IEEE)
https://doi.org/10.1109/iedm.1981.190155
Abstract
No abstract available
Keywords
CHANNEL EFFECTS
MOS DEVICES
EFFECTS IN MOS
PHYSICAL MECHANISMS
MECHANISMS RESPONSIBLE
Cited by 21 articles