Tight-binding density of electronic states of pregraphitic carbon

Abstract

The density of states of pregraphitic (disordered) carbon has been investigated using a tight-binding description of the electronic structure. The tight-binding Hamiltonian has been diagonalized using the recursion method for different stackings of graphene layers. The density of states of π electrons in a disordered stacking usually called ‘‘turbostratic’’ graphite and the resulting behavior near the Fermi level are compared to the results obtained for the Bernal structure, for the rhombohedral structure, and for the simple hexagonal structure.