Degradation-Free P-CVD SiN Deposition on GaAs FETs
- 1 June 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (6A), L350-352
- https://doi.org/10.1143/jjap.22.l350
Abstract
The plasma enhanced chemical vapour deposition (P-CVD) silicon nitride (SiN) effect on normally-off GaAs FETs was examined. It was verified that positive ion bombardment effect brings about GaAs FET degradation. A simple, improved method of successfully achieving damage free SiN deposition on GaAs FETs is proposed.Keywords
This publication has 2 references indexed in Scilit:
- Glow Discharge Phenomena in Plasma Etching and Plasma DepositionJournal of the Electrochemical Society, 1979
- Positive-ion bombardment of substrates in rf diode glow discharge sputteringJournal of Applied Physics, 1972