Properties of lattice mismatched IIa-fluorides on silicon
- 1 January 1990
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 184 (1-2), 387-393
- https://doi.org/10.1016/0040-6090(90)90436-h
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Heteroepitaxial Pb1−xSnxSe on Si infrared sensor array with 12 μm cutoff wavelengthApplied Physics Letters, 1989
- Progress in Compound‐Semiconductor‐on‐Silicon‐Heteroepitaxy with Fluoride Buffer LayersJournal of the Electrochemical Society, 1989
- Photovoltaic infrared sensors in heteroepitaxial PbTe on SiApplied Physics Letters, 1988
- Growth of lattice-mismatched stacked epitaxial CaF2-SrF2-BaF2 layers on (100) oriented Si substratesApplied Physics Letters, 1988
- Flattening the Surface of CaF2/Si(100) Structures by Post-Growth AnnealingJapanese Journal of Applied Physics, 1988
- Molecular beam epitaxial growth of high structural perfection CdTe on Si using a (Ca,Ba)F2 buffer layerApplied Physics Letters, 1986
- Strain measurement of epitaxial CaF2 on Si (111) by MeV ion channelingApplied Physics Letters, 1985
- Epitaxial growth and characterization of CaF2 on SiJournal of Applied Physics, 1985
- Use of a rapid anneal to improve CaF2:Si (100) epitaxyApplied Physics Letters, 1985
- Heteroepitaxial Growth of Group-IIa-Fluoride Films on Si SubstratesJapanese Journal of Applied Physics, 1983