A unified current-voltage model for long-channel nMOSFETs

1 February 1991

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 38 (2), 399-406
https://doi.org/10.1109/16.69923

Abstract

A unified current-voltage model is developed for long-channel nMOSFETs. This model is based on the unified charge control model (UCCM), which agrees very well with quantum-mechanical calculation results assuming two-dimensional electron gas, as well as with experimental capacitance-voltage measurements for the inversion layer formed at the Si-SiO/sub 2/ interface on

Keywords

ELECTRONS
CAPACITANCE-VOLTAGE CHARACTERISTICS
THRESHOLD VOLTAGE
MOON
TEMPERATURE
INTEGRAL EQUATIONS
CIRCUIT SIMULATION
SILICON
MOSFET CIRCUITS
CAPACITANCE MEASUREMENT

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