CdS Thin-Film Formation by the Method of Co-evaporation
- 1 September 1964
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 35 (9), 2730-2732
- https://doi.org/10.1063/1.1713832
Abstract
The technique of double evaporation of CdS and S was investigated. A significant increase of resistivity to 107 Ω·cm, and the onset of space‐charge‐limited current were observed in films made by this technique. It is hypothesized that the improvement noted compared with films from a single source evaporation of CdS is due to the reduction in number of sulfur vacancies.Keywords
This publication has 5 references indexed in Scilit:
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- Injection Currents in InsulatorsProceedings of the IRE, 1962
- Space-Charge-Limited Currents in SolidsPhysical Review B, 1955
- Properties of Ohmic Contacts to Cadmium Sulfide Single CrystalsPhysical Review B, 1955
- Controlled Conductivity in CdS Single CrystalsZeitschrift für Physikalische Chemie, 1954