Photoenhanced metalorganic chemical vapor deposition of ZnSe films using diethylzinc and dimethylselenide

Abstract

ZnSe thin films have been grown on (100)‐oriented GaAs and glass substrates by photoenhanced metalorganic chemical vapor deposition from diethylzinc and dimethylselenide with a low‐pressure mercury lamp as a light source. Process temperatures have been varied between 500 and 200° C. Without irradiation of the ultraviolet (UV) light, the growth rate decreases rapidly below 400 °C, whereas with irradiation, the growth occurred in the whole temperature range investigated, and the enhancement of the growth rate was observed above 400 °C. Furthermore, the enhancement of the preferential orientation of ZnSe films grown on glass substrates by the UV irradiation was also observed.