Photoluminescence line shape in degenerate semiconductor quantum wells
- 15 August 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 38 (6), 4113-4119
- https://doi.org/10.1103/physrevb.38.4113
Abstract
A microscopic theory and data are presented for the steady-state photoluminescence line shape at low lattice temperatures in modulation-doped degenerate direct-band-gap semiconductor quantum wells which are excited by a low-intensity cw laser. Electron-hole recombinations occur through direct as well as impurity-assisted (indirect) processes. In our theoretical model the photoluminescence linewidths and spectral shifts arise primarily from ionized-impurity scattering of the majority and minority carriers with smaller contributions from the thermal distribution of the carriers. The dependencies of the line shape on the doping configuration (e.g., space-layer thickness) and the carrier temperature are studied. The theory yields good agreement with the line shape of luminescence data from the modulation-doped n-type and p-type strained /GaAs quantum wells with no adjustable parameters.
Keywords
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