Two-dimensional numerical investigation of the impact of material-parameter uncertainty on the steady-state performance of passivated 4H–SiC thyristors
- 15 October 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (8), 4625-4630
- https://doi.org/10.1063/1.368689
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- The critical charge density of 4H-SiC thyristorsIEEE Transactions on Electron Devices, 1998
- Ionization rates and critical fields in 4H silicon carbideApplied Physics Letters, 1997
- Homoepitaxial VPE Growth of SiC Active LayersPhysica Status Solidi (b), 1997
- SiC material for high-power applicationsMaterials Science and Engineering B, 1997
- Effect of substrate orientation and crystal anisotropy on the thermally oxidized SiO2/SiC interfaceJournal of Applied Physics, 1996
- Surface potential fluctuations in metal–oxide–semiconductor capacitors fabricated on different silicon carbide polytypesApplied Physics Letters, 1994
- SiC devices: physics and numerical simulationIEEE Transactions on Electron Devices, 1994
- Conductivity Anisotropy in Epitaxial 6H and 4H SicMRS Proceedings, 1994
- Photoconductivity of single-crystal 3C-SiC films excited by ultrashort light pulsesSemiconductor Science and Technology, 1992
- A new approach to the modeling of pnpn structuresSolid-State Electronics, 1991