Logarithmic Temperature Dependence of the Conductivity and Lack of Universal One-Parameter Scaling in the Two-Dimensional Metal
Preprint
- 10 March 1998
Abstract
We show that the two-dimensional metallic state in Si-MOS samples persists over a wide range of temperatures (16 mK to 8 K), sample peak mobilities (varying by a factor of 8), carrier densities (0.8 to $35\times 10^{11}$ cm$^{-2}$) and conductances from 0.3 to $120 e^2/h$. Our data reveal a failure of the universal one-parameter scaling. We have found a weak delocalizing logarithmic correction to the conductivity, which governs a weak increase in the conductivity of the 2D metal as $T$ approaches zero.
All Related Versions
- Version 1, 1998-01-09, ArXiv
- Version 2, 1998-03-10, ArXiv
- Published version: JETP Letters, 68 (5), 442.