Gas phase depletion and flow dynamics in horizontal MOCVD reactors
- 1 August 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 76 (2), 352-372
- https://doi.org/10.1016/0022-0248(86)90381-7
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- On the effect of carrier gas on growth conditions in MOCVD reactors; Raman study of local temperatureJournal of Crystal Growth, 1984
- A Mathematical Model of the Coupled Fluid Mechanics and Chemical Kinetics in a Chemical Vapor Deposition ReactorJournal of the Electrochemical Society, 1984
- Phenomenological Model of the CVD Epitaxial ReactorJournal of the Electrochemical Society, 1982
- Gas Flow Patterns in Horizontal Epitaxial Reactor Cells Observed by Interference HolographyJournal of the Electrochemical Society, 1982
- Emergence of a periodic mode in the so-called turbulent region in a circular Couette flowJournal de Physique Lettres, 1982
- Transport Phenomena Measurements in Epitaxial ReactorsJournal of the Electrochemical Society, 1978
- Effect of Thermal Instability on Thermally Developing Laminar Channel FlowJournal of Heat Transfer, 1976
- The chemistry and transport phenomena of chemical vapor deposition of silicon from SiCl4Journal of Crystal Growth, 1975
- Convective Instability in the Thermal Entrance Region of a Horizontal Parallel-Plate Channel Heated from BelowJournal of Heat Transfer, 1973
- Combined Forced and Free Convection in a Boundary Layer FlowPhysics of Fluids, 1959