Transverse mode emission characteristics of gain-guided surface emitting lasers
- 8 November 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (19), 2624-2626
- https://doi.org/10.1063/1.110426
Abstract
Transverse mode emission characteristics of gain‐guided surface emitting lasers at 0.85 μm were investigated. Up to six nondegenerate circularly symmetrical modes were observed with detunings between the adjacent modes around 2.5 Å. Numerical simulations were performed. The calculated beam sizes, difference of modal gains to account for the side mode suppression ratio when operated with one dominant mode, and wavelength detunings agreed with experiments. Numerical simulations also predict that the mirror loss due to Gaussian beam diffraction is nonnegligible for the 1.3–1.55 μm devices.Keywords
This publication has 7 references indexed in Scilit:
- 144 °C operation of 1.3 μm InGaAsP vertical cavity lasers on GaAs substratesApplied Physics Letters, 1992
- Performance of gain-guided surface emitting lasers with semiconductor distributed Bragg reflectorsIEEE Journal of Quantum Electronics, 1991
- Transverse mode characteristics of vertical cavity surface-emitting lasersApplied Physics Letters, 1990
- Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface-emitting lasersApplied Physics Letters, 1990
- Top-surface-emitting GaAs four-quantum-well lasers emitting at 0.85 μmElectronics Letters, 1990
- Low threshold planarized vertical-cavity surface-emitting lasersIEEE Photonics Technology Letters, 1990
- 90% coupling of top surface emitting GaAs/AlGaAs quantum well laser output into 8 [micro sign]m diameter core silica fibreElectronics Letters, 1990