Efficient 30 mW grating surface-emitting lasers

Abstract

A surface-emitting AlGaAs second-order distributed Bragg reflector laser using a graded index separate confinement heterostructure with a single quantum well has been fabricated. The surface emitted power is in excess of 30 mW with an external differential quantum efficiency of 20%. These values approach the performance of present commercially available edge-emitting diode lasers. Under severe current modulation conditions, the stable single longitudinal mode had nearly 30 dB wavelength sidemode rejection, and a near diffraction limited 0.51° full width half-power beam divergence of the single-lobe far-field pattern.