Dependence of Ga1-xAlxAs LPE layer thickness on solution composition
- 30 November 1977
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 41 (1), 166-171
- https://doi.org/10.1016/0022-0248(77)90110-5
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Computer simulations of liquid phase epitaxy of III-V ternary alloysJournal of Crystal Growth, 1976
- Epitaxial growth of GaAs from thin Ga solutionJournal of Applied Physics, 1976
- Dependence of GaAs LPE layer thickness on growth temperatureJournal of Crystal Growth, 1976
- The influence of growth solution thickness on the LPE layer thickness and constitutional supercooling requirement for diffusion-limited growthJournal of Crystal Growth, 1974
- Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniquesJournal of Crystal Growth, 1974
- Comparison of theory and experiment for LPE layer thickness of GaAs and GaAs AlloysJournal of Crystal Growth, 1974
- Isothermal diffusion theory of LPE: GaAs, GaP, bubble garnetJournal of Crystal Growth, 1973
- The application of numerical methods to simulate the liquid phase epitaxial growth of Ga1 −xAlxAs from an unstirred solutionJournal of Crystal Growth, 1972
- Preparation of multilayer LPE heterostructures with crystalline solid solutions of AlxGa1−xAs: Heterostructure lasersMetallurgical Transactions, 1971
- The distribution of solvent in an unstirred melt under the conditions of crystal growth by liquid epitaxy and its effect on the rate of growthJournal of Crystal Growth, 1969