Photoluminescence properties of disordered GaAs heavily doped with Si
- 31 December 1984
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 31-32, 442-444
- https://doi.org/10.1016/0022-2313(84)90321-1
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Heavily doped semiconductors and devicesAdvances in Physics, 1978
- Concentration-dependent absorption and spontaneous emission of heavily doped GaAsJournal of Applied Physics, 1976
- Luminescent Properties of Energy-Band-Tail States in GaAs:SiPhysical Review B, 1970