Thermal equilibration in hydrogenated amorphous silicon-based films
- 1 December 1989
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 114, 648-650
- https://doi.org/10.1016/0022-3093(89)90678-9
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Nature of Localized States in Hydrogenated Si–Based Amorphous Semiconductor Films Elucidated from LESR and CPMJapanese Journal of Applied Physics, 1989
- Thermally induced metastable defects in hydrogenated amorphous silicon and silicon-carbon alloy filmsPhysical Review B, 1988
- Thermal equilibrium process in undoped hydrogenated amorphous silicon and silicon-carbon alloy filmsApplied Physics Letters, 1988
- Equilibrium temperature and related defects in intrinsic glow discharge amorphous siliconApplied Physics Letters, 1987
- Thermal-Equilibrium Defect Processes in Hydrogenated Amorphous SiliconPhysical Review Letters, 1986
- Intrinsic dangling-bond density in hydrogenated amorphous siliconPhysical Review B, 1985