ESR studies of thermally oxidized silicon wafers
- 28 February 1981
- journal article
- Published by Elsevier BV in Solid State Communications
- Vol. 37 (5), 399-404
- https://doi.org/10.1016/0038-1098(81)91214-x
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Theory of the electronic structure of the Si-SiinterfacePhysical Review B, 1980
- Luminescence and ESR studies of defects in hydrogenated amorphous siliconSolid State Communications, 1980
- ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafersJournal of Applied Physics, 1979
- Paramagnetic defects in silicon/silicon dioxide systemsSurface Science, 1976
- High-field transport in SiO2 on silicon induced by corona charging of the unmetallized surfaceJournal of Applied Physics, 1976
- Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance IJapanese Journal of Applied Physics, 1971