Effects of ionizing radiation on amorphous insulators

Abstract

This paper seeks to update previous reviews of the effects of ionizing radiation on amorphous insulators. The electronic and atomic structures of radiation-induced defect centers (trapped electrons or holes) are discussed primarily in terms of data deriving from the technique of electron spin resonance. Emphasis is placed on important fiber-optic materials (pure and doped fused silicas) and attention is directed to the problem of relating radiation-induced optical absorption bands to specific defect structures.