An analytic model for HEMT's using new velocity-field dependence

Abstract

An analytic model is developed for the output current-voltage characteristics and microwave-signal parameters of high electron mobility transistors (HEMT's). In this model, the GSW equation is used to approach the behavior of electron drift velocity versus electric field. The resulting I-V curves are in excellent agreement with experimental data. In order to predict the microwave performance of these devices, this model is then used to derive the small-signal parameters, transconductance, channel conductance, and gate capacitance.